savantic semiconductor product specification silicon npn power transistors 2SC4533 description with to-220fa package high speed switching high v c bo wide area of safe operation applications for high breakdown voltage ,high-speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 3 a i cm collector current-peak 6 a i b base current 1.2 a t c =25 30 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4533 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma , i b =0 400 v v cesat collector-emitter saturation voltage i c =1.5a; i b =0.3a 1.0 v v besat base-emitter saturation voltage i c =1.5a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =0.1a ; v ce =5v 10 h fe-2 dc current gain i c =1.2a ; v ce =2v 8 40 f t transition frequency i c =0.2a ; v ce =10v;f=1mhz 10 mhz switching times t on turn-on time 1.0 s t s storage time 3.0 s t f fall time i c =1.5a; i b1 =0.15a i b2 =-0.3a;v cc =200v 0.3 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4533 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC4533
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